| PART |
Description |
Maker |
| K4E640412E |
(K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
|
Samsung semiconductor
|
| KM44C16000B KM44C16100B |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG
|
| K4F640412D K4F660412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG[Samsung semiconductor]
|
| NN514256 NN514256A NN514256AJ-40 NN514256AJ-45 NN5 |
CMOS 256K x 4bit Dynamic RAM
|
ETC[ETC]
|
| HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG
Infineon Technologies AG
|
| MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
| GM71CS17403C GM71CS17403C-5 GM71CS17403C-6 GM71CS1 |
LED T5.5 24V12.5MA RED RoHS Compliant: Yes
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor Inc.
|
| HYB3164400T-60 HYB3164400T-50 HYB3164400J-60 HYB31 |
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MN4SV17160BT-10 MN4SV17160BT-80 MN4SV17160BT-90 MN |
16M BIT SYNCHRONOUS DYNAMIC RAM
|
PANASONIC[Panasonic Semiconductor]
|
| MN4SV17160BT-10 MN4SV17160BT-90 MN4SV1716BT-10 |
16M BIT SYNCHRONOUS DYNAMIC RAM
|
Panasonic Corporation
http://
|
